Semiconductors
IPB107N20N3G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 IPB107N20N3G Infineon Technologies TO263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB107N20N3G
- Brand
- Infineon Technologies
- Qty
- 506000
- Package
- TO263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 200 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 87 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB107N20N3GATMA1 IPB17N2N3GXT SP000676406
- Fall Time: 11 ns
- Mounting Style: SMD/SMT