Semiconductors
IPB081N06L3G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 IPB081N06L3G Infineon Technologies TO263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB081N06L3G
- Brand
- Infineon Technologies
- Qty
- 548000
- Package
- TO263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 9.25 mm
- Qg - Gate Charge: 29 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB081N06L3GATMA1 IPB81N6L3GXT SP000398076
- Fall Time: 7 ns
- Mounting Style: SMD/SMT