Transistor
IPB038N12N3GATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 IPB038N12N3GATMA1 Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB038N12N3GATMA1
- Brand
- Infineon Technologies
- Qty
- 591000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 120 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 211 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: G IPB038N12N3 IPB38N12N3GXT SP000694160
- Fall Time: 21 ns
- Mounting Style: SMD/SMT