Semiconductors
IPB025N10N3GE8187ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-CH 100V 180A TO263-7 IPB025N10N3GE8187ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB025N10N3GE8187ATMA1
- Brand
- Infineon Technologies
- Qty
- 520000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-CH 100V 180A TO263-7
- Source Category
- ["Discrete Semiconductor Products", "Transistors", "FETs, MOSFETs", "Single FETs, MOSFETs"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: Infineon Technologies
- Series: OptiMOS™
- Package: Tape & Reel (TR)
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V