Semiconductors
IPB025N10N3GATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 IPB025N10N3GATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB025N10N3GATMA1
- Brand
- Infineon Technologies
- Qty
- 585000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-7
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 206 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 28 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET