Semiconductors
IPB020N10N5LFATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET DIFFERENTIATED MOSFETS IPB020N10N5LFATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB020N10N5LFATMA1
- Brand
- Infineon Technologies
- Qty
- 509000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET DIFFERENTIATED MOSFETS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: D2PAK-3
- Vgs th - Gate-Source Threshold Voltage: 2.2 V
- Qg - Gate Charge: 210 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB020N10N5LF SP001503854
- Fall Time: 29 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET