Semiconductors
IPB017N06N3G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 IPB017N06N3G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB017N06N3G
- Brand
- Infineon Technologies
- Qty
- 598000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-7
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 275 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB017N06N3GATMA1 IPB17N6N3GXT SP000434404
- Type: OptiMOS 3 Power-Transistor
- Fall Time: 24 ns