Power
IPB011N04LG Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 IPB011N04LG Infineon Technologies TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB011N04LG
- Brand
- Infineon Technologies
- Qty
- 518000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 40 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-7
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 9.25 mm
- Qg - Gate Charge: 346 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB011N04LGATMA1 IPB11N4LGXT SP000391498
- Fall Time: 21 ns
- Mounting Style: SMD/SMT