Semiconductors
IMW120R045M1 Infineon Technologies Inventory and RFQ Quote
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS IMW120R045M1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IMW120R045M1
- Brand
- Infineon Technologies
- Qty
- 539000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- Source Category
- (SiC) > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Channel Type: 1 N
- Power Dissipation: 228W
- Continuous Drain Current: 52A
- Drain Source Voltage: 1200V