Semiconductors
IMW120R020M1HXKSA1 Infineon Technologies Inventory and RFQ Quote
SIC DISCRETE IMW120R020M1HXKSA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IMW120R020M1HXKSA1
- Brand
- Infineon Technologies
- Qty
- 542000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
SIC DISCRETE
- Source Category
- ["Discrete Semiconductor Products", "Transistors - FETs, MOSFETs - Single"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: Infineon Technologies
- Series: CoolSiC™
- Package: Tube
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V