Power
IKZ50N65ES5 Infineon Technologies Inventory and RFQ Quote
274W 80A 650V TO-247-4 IGBT Transistors / Modules ROHS IKZ50N65ES5 Infineon Technologies TO-247-4L Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IKZ50N65ES5
- Brand
- Infineon Technologies
- Qty
- 540000
- Package
- TO-247-4L
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
274W 80A 650V TO-247-4 IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 274W
- Turn?off Delay Time (Td(off)): 294ns
- Operating Temperature: -40℃~+175℃@(Tj)
- Turn?on Delay Time (Td(on)): 36ns
- Collector Current (Ic): 80A
- Collector-Emitter Breakdown Voltage (Vces): 650V
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@500uA
- Total Gate Charge (Qg@Ic: 120nC@50A
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1.35V@50