Semiconductors
IKB15N65EH5 Infineon Technologies Inventory and RFQ Quote
105W 30A 650V TO-263-3 IGBT Transistors / Modules ROHS IKB15N65EH5 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IKB15N65EH5
- Brand
- Infineon Technologies
- Qty
- 537000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
105W 30A 650V TO-263-3 IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Turn?off Delay Time (Td(off)): 145ns
- Power Dissipation (Pd): 105W
- Operating Temperature: -40℃~+175℃@(Tj)
- Turn?on Delay Time (Td(on)): 16ns
- Collector Current (Ic): 30A
- Collector-Emitter Breakdown Voltage (Vces): 650V
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@150uA
- Total Gate Charge (Qg@Ic: 38nC@15A
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1.65V@15A