Semiconductors
IAUC60N10S5L110ATMA1 Infineon Technologies Inventory and RFQ Quote
100V 60A 11mΩ@30A,10V 88W 2.2V@30uA 1PCSNChannel TDSON-8 MOSFETs ROHS IAUC60N10S5L110ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IAUC60N10S5L110ATMA1
- Brand
- Infineon Technologies
- Qty
- 522000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 60A 11mΩ@30A,10V 88W 2.2V@30uA 1PCSNChannel TDSON-8 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 60A
- Drain Source On Resistance (RDS(on)@Vgs: 11mΩ@30A
- Power Dissipation (Pd): 88W
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@30uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.665nF@50V
- Total Gate Charge (Qg@Vgs): 24.1nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)