Semiconductors
HSK10N06 HUASHUO Inventory and RFQ Quote
60V 10A 40mΩ@10V,10A 2W 3V@250uA 1 N-Channel SOT-89 MOSFETs ROHS HSK10N06 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSK10N06
- Brand
- HUASHUO
- Qty
- 538000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 10A 40mΩ@10V,10A 2W 3V@250uA 1 N-Channel SOT-89 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs: 40mΩ@10V
- Power Dissipation (Pd): 2W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 226pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 3.427nF@25V
- Total Gate Charge (Qg@Vgs): 53nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)