Semiconductors
HSH80N20 HUASHUO Inventory and RFQ Quote
200V 80A 20mΩ@10V,30A 370W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS HSH80N20 HUASHUO TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSH80N20
- Brand
- HUASHUO
- Qty
- 515000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
200V 80A 20mΩ@10V,30A 370W 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs: 20mΩ@10V
- Power Dissipation (Pd): 370W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 37pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 7.49nF@50V
- Total Gate Charge (Qg@Vgs): 115nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)