Semiconductors
HSBG2103 HUASHUO Inventory and RFQ Quote
20V 650mA 520mΩ@4.5V,650mA 150mW 1V@250uA 1PCSPChannel DFN1006-3 MOSFETs ROHS HSBG2103 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBG2103
- Brand
- HUASHUO
- Qty
- 544000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 650mA 520mΩ@4.5V,650mA 150mW 1V@250uA 1PCSPChannel DFN1006-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 650mA
- Drain Source On Resistance (RDS(on)@Vgs: 520mΩ@4.5V
- Power Dissipation (Pd): 150mW
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Type: 1 P