Semiconductors
HSBA8066 HUASHUO Inventory and RFQ Quote
80V 60A 8.7mΩ@10V,10A 52W 2.3V@250uA 1PCSNChannel DFN-8(5.1x5.7) MOSFETs ROHS HSBA8066 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBA8066
- Brand
- HUASHUO
- Qty
- 534000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
80V 60A 8.7mΩ@10V,10A 52W 2.3V@250uA 1PCSNChannel DFN-8(5.1x5.7) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 60A
- Drain Source On Resistance (RDS(on)@Vgs: 8.7mΩ@10V
- Power Dissipation (Pd): 52W
- Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 12pF@40V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.738nF@40V
- Total Gate Charge (Qg@Vgs): 29nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)