Semiconductors
HSBA6214 HUASHUO Inventory and RFQ Quote
60V 17A 35mΩ@10V,15A 2W 2.5V@250uA 2 N-Channel DFN-8(5.2x5.8) MOSFETs ROHS HSBA6214 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBA6214
- Brand
- HUASHUO
- Qty
- 528000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 17A 35mΩ@10V,15A 2W 2.5V@250uA 2 N-Channel DFN-8(5.2x5.8) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 17A
- Drain Source On Resistance (RDS(on)@Vgs: 35mΩ@10V
- Power Dissipation (Pd): 2W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 46pF@10V
- Type: 2 N
- Input Capacitance (Ciss@Vds): 1.027nF@15V
- Total Gate Charge (Qg@Vgs): 19nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)