Semiconductors
HSBA15810C HUASHUO Inventory and RFQ Quote
100V 100A 4.5mΩ@10V,30A 208W 4V@250uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS HSBA15810C HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBA15810C
- Brand
- HUASHUO
- Qty
- 532000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 100A 4.5mΩ@10V,30A 208W 4V@250uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 100A
- Drain Source On Resistance (RDS(on)@Vgs: 4.5mΩ@10V
- Power Dissipation (Pd): 208W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N