Semiconductors
HSBA100P04 HUASHUO Inventory and RFQ Quote
40V 100A 52.1W 4.6mΩ@10V,20A 1.8V@250uA 1PCSPChannel PRPAK(5x6) MOSFETs ROHS HSBA100P04 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBA100P04
- Brand
- HUASHUO
- Qty
- 592000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 100A 52.1W 4.6mΩ@10V,20A 1.8V@250uA 1PCSPChannel PRPAK(5x6) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 100A
- Power Dissipation (Pd): 52.1W
- Drain Source On Resistance (RDS(on)@Vgs: 4.6mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 722pF@20V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 7.09nF@20V
- Total Gate Charge (Qg@Vgs): 115nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)