Semiconductors
HSBA005N04 HUASHUO Inventory and RFQ Quote
40V 189A 0.55mΩ@10V,30A 35W 2.5V@250uA 1 N-Channel PRPAK(5x6) MOSFETs ROHS HSBA005N04 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBA005N04
- Brand
- HUASHUO
- Qty
- 536000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 189A 0.55mΩ@10V,30A 35W 2.5V@250uA 1 N-Channel PRPAK(5x6) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 189A
- Drain Source On Resistance (RDS(on)@Vgs: 0.55mΩ@10V
- Power Dissipation (Pd): 35W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 117pF@20V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 8.358nF@20V
- Total Gate Charge (Qg@Vgs): 145nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)