Semiconductors
HN2A01FU-Y(TE85L,F Toshiba Semiconductor and Storage Inventory and RFQ Quote
Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A HN2A01FU-Y(TE85L,F Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HN2A01FU-Y(TE85L,F
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 581000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: PNP
- Emitter- Base Voltage VEBO: 5 V
- Package / Case: US-6
- Packaging: ['Cut Tape', 'MouseReel', 'Reel']
- Product Category: Bipolar Transistors - BJT
- Brand: Toshiba
- DC Current Gain hFE Max: 400
- Collector- Emitter Voltage VCEO Max: 50 V
- Product Type: BJTs - Bipolar Transistors
- Maximum Operating Temperature: + 125 C