Semiconductors
HN1C03FU-B,LF Toshiba Semiconductor and Storage Inventory and RFQ Quote
Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package HN1C03FU-B,LF Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HN1C03FU-B,LF
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 584000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: NPN
- Emitter- Base Voltage VEBO: 25 V
- Package / Case: US-6
- Packaging: ['Cut Tape', 'MouseReel', 'Reel']
- Product Category: Bipolar Transistors - BJT
- Brand: Toshiba
- DC Current Gain hFE Max: 1200
- Collector- Emitter Voltage VCEO Max: 20 V
- Configuration: Dual
- Maximum Operating Temperature: + 150 C