Semiconductors
HN1A01FE-Y,LF Toshiba Semiconductor and Storage Inventory and RFQ Quote
Bipolar Transistors - BJT ES6 PLN HN1A01FE-Y,LF Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HN1A01FE-Y,LF
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 578000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT ES6 PLN
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: PNP
- Emitter- Base Voltage VEBO: - 5 V
- Width: 1.2 mm
- Package / Case: ES6-6
- Mounting Style: SMD/SMT
- Product Category: Bipolar Transistors - BJT
- DC Collector/Base Gain hfe Min: 120
- DC Current Gain hFE Max: 400
- Collector- Emitter Voltage VCEO Max: - 50 V
- Product Type: BJTs - Bipolar Transistors