Power
HGTP3N60C3 Harris Corporation Inventory and RFQ Quote
33W 6A 600V TO-220AB IGBT Transistors / Modules ROHS HGTP3N60C3 Harris Corporation TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HGTP3N60C3
- Brand
- Harris Corporation
- Qty
- 597000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
33W 6A 600V TO-220AB IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 33W
- Operating Temperature: -40℃~+150℃@(Tj)
- Collector Current (Ic): 6A
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Input Capacitance (Cies@Vce): -
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V
- Total Gate Charge (Qg@Ic: 17.3nC
- Turn?on Switching Loss (Eon): -