Power
HGTG32N60E2 Harris Corporation Inventory and RFQ Quote
208W 50A 600V TO-247 IGBT Transistors / Modules ROHS HGTG32N60E2 Harris Corporation TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HGTG32N60E2
- Brand
- Harris Corporation
- Qty
- 517000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
208W 50A 600V TO-247 IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 208W
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 50A
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Input Capacitance (Cies@Vce): -
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.9V@15V
- Total Gate Charge (Qg@Ic: 265nC
- Turn?on Switching Loss (Eon): -