Semiconductors
HE8050G-D-AE3-R UTC(Unisonic Tech) Inventory and RFQ Quote
25V 350mW 160@100mA,1V 1.5A NPN SOT-23 Bipolar (BJT) ROHS HE8050G-D-AE3-R UTC(Unisonic Tech) Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HE8050G-D-AE3-R
- Brand
- UTC(Unisonic Tech)
- Qty
- 586000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
25V 350mW 160@100mA,1V 1.5A NPN SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 25V
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE@Ic: 160@100mA
- Collector Current (Ic): 1.5A
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 500mV@800mA
- Transistor Type: NPN
- Operating Temperature: -