Semiconductors
HBDM60V600W-7 Diodes Incorporated Inventory and RFQ Quote
Bipolar Transistors - BJT 200mW Half H-Bridge HBDM60V600W-7 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HBDM60V600W-7
- Brand
- Diodes Incorporated
- Qty
- 583000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT 200mW Half H-Bridge
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: NPN, PNP
- Emitter- Base Voltage VEBO: - 5.5 V, 6 V
- Width: 1.35 mm
- Package / Case: SOT-363-6
- Mounting Style: SMD/SMT
- Product Category: Bipolar Transistors - BJT
- Brand: Diodes Incorporated
- DC Current Gain hFE Max: 300
- Unit Weight: 0.000212 oz
- Collector- Emitter Voltage VCEO Max: - 60 V, 65 V