Semiconductors
GT125N10M GOFORD Inventory and RFQ Quote
100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS GT125N10M GOFORD TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- GT125N10M
- Brand
- GOFORD
- Qty
- 530000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 130A
- Drain Source On Resistance (RDS(on)@Vgs: 4.1mΩ@10V
- Power Dissipation (Pd): 192W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 15.1pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 6.1246nF@50V
- Total Gate Charge (Qg@Vgs): 101.6nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)