Power
GP2T080A120H SemiQ Inventory and RFQ Quote
1.2kV 35A 188W 100mΩ@20A,20V 4V@10mA 1PCSNChannel TO-247-4 MOSFETs ROHS GP2T080A120H SemiQ TO-247-4L Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- GP2T080A120H
- Brand
- SemiQ
- Qty
- 519000
- Package
- TO-247-4L
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
1.2kV 35A 188W 100mΩ@20A,20V 4V@10mA 1PCSNChannel TO-247-4 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 1.2kV
- Continuous Drain Current (Id): 35A
- Power Dissipation (Pd): 188W
- Drain Source On Resistance (RDS(on)@Vgs: 100mΩ@20A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@10mA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.377nF@1000V
- Total Gate Charge (Qg@Vgs): 61nC@20V
- Operating Temperature: -55℃~+175℃@(Tj)