Semiconductors
GL10N10B4S GL Inventory and RFQ Quote
100V 10A 110mΩ@10V,10A 40W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS GL10N10B4S GL TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- GL10N10B4S
- Brand
- GL
- Qty
- 581000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 10A 110mΩ@10V,10A 40W 2.5V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs: 110mΩ@10V
- Power Dissipation (Pd): 40W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 3pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 255pF@50V
- Total Gate Charge (Qg@Vgs): 4nC@10V
- Operating Temperature: -