Semiconductors
FP150R07N3E4 Infineon Technologies Inventory and RFQ Quote
430W 150A 650V FS(Field Stop) - IGBT Transistors / Modules ROHS FP150R07N3E4 Infineon Technologies E122X62-43L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FP150R07N3E4
- Brand
- Infineon Technologies
- Qty
- 539000
- Package
- E122X62-43L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
430W 150A 650V FS(Field Stop) - IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 430W
- Operating Temperature: -40℃~+150℃@(Tj)
- Collector Current (Ic): 150A
- Collector-Emitter Breakdown Voltage (Vces): 650V
- Input Capacitance (Cies@Vce): 6.2nF@25V
- Type: FS( )
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V