Semiconductors
FMMT555QTA Diodes Incorporated Inventory and RFQ Quote
150V 500mW 50@300mA,10V 1A PNP SOT-23-3 Bipolar (BJT) ROHS FMMT555QTA Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FMMT555QTA
- Brand
- Diodes Incorporated
- Qty
- 595000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
150V 500mW 50@300mA,10V 1A PNP SOT-23-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 150V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic: 50@300mA
- Collector Current (Ic): 1A
- Transition Frequency (fT): 100MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 300mV@10mA
- Operating Temperature: -55℃~+150℃@(Tj)