Semiconductors
FGY60T120SQDN onsemi Inventory and RFQ Quote
IGBT Transistors IGBT 1200V 60A UFS FGY60T120SQDN onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FGY60T120SQDN
- Brand
- onsemi
- Qty
- 541000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
IGBT Transistors IGBT 1200V 60A UFS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > IGBT Transistors
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Packaging: Tube
- Collector-Emitter Saturation Voltage: 1.7 V
- Product Category: IGBT Transistors
- Subcategory: IGBTs
- Gate-Emitter Leakage Current: 200 nA
- Continuous Collector Current Ic Max: 120 A
- Maximum Operating Temperature: + 175 C
- Brand: ON Semiconductor
- Pd - Power Dissipation: 517 W
- Continuous Collector Current at 25 C: 120 A