Semiconductors
FF200R12KT4 Infineon Technologies Inventory and RFQ Quote
1.1kW 320A 1.2kV IGBT module - IGBT Transistors / Modules ROHS FF200R12KT4 Infineon Technologies S106X61-7L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FF200R12KT4
- Brand
- Infineon Technologies
- Qty
- 526000
- Package
- S106X61-7L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
1.1kW 320A 1.2kV IGBT module - IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Turn?off Delay Time (Td(off)): 450ns
- Power Dissipation (Pd): 1.1kW
- Operating Temperature: -40℃~+150℃@(Tvjop)
- Turn?on Delay Time (Td(on)): 160ns
- Collector Current (Ic): 320A
- Collector-Emitter Breakdown Voltage (Vces): 1.2kV
- Type: IGBT
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 5.8V@7.6mA
- Total Gate Charge (Qg@Ic: -
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1.75V@