Semiconductors
FDS86106 onsemi Inventory and RFQ Quote
MOSFET 100V N-Channel PowerTrench MOSFET FDS86106 onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FDS86106
- Brand
- onsemi
- Qty
- 596000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 100V N-Channel PowerTrench MOSFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: SO-8
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Width: 3.9 mm
- Qg - Gate Charge: 3 nC
- Vgs - Gate-Source Voltage: 20 V
- Type: N-Channel Power Trench MOSFET
- Fall Time: 10 ns
- Mounting Style: SMD/SMT