Semiconductors
FDB86363-F085 onsemi Inventory and RFQ Quote
MOSFET N-Channel Power Trench MOSFET FDB86363-F085 onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FDB86363-F085
- Brand
- onsemi
- Qty
- 511000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Channel Power Trench MOSFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 80 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 2 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Width: 9.65 mm
- Qg - Gate Charge: 131 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: FDB86363_F085
- Fall Time: 40 ns