Semiconductors
FDB86360-F085 onsemi Inventory and RFQ Quote
MOSFET N-Channel Power Trench MOSFET FDB86360-F085 onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FDB86360-F085
- Brand
- onsemi
- Qty
- 580000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Channel Power Trench MOSFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 80 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 1.5 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Width: 9.65 mm
- Qg - Gate Charge: 207 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: FDB86360_F085
- Fall Time: 70 ns