Power
FCP650N80Z onsemi Inventory and RFQ Quote
MOSFET 800V 10A NChn MOSFET SuperFET II FCP650N80Z onsemi TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FCP650N80Z
- Brand
- onsemi
- Qty
- 550000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET 800V 10A NChn MOSFET SuperFET II
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 800 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Width: 4.7 mm
- Qg - Gate Charge: 27 nC
- Vgs - Gate-Source Voltage: 20 V, 30 V
- Fall Time: 3.4 ns
- Mounting Style: Through Hole
- Product Category: MOSFET