Semiconductors
FCD9N60NTM onsemi Inventory and RFQ Quote
MOSFET 600V N-Channel SupreMOS FCD9N60NTM onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FCD9N60NTM
- Brand
- onsemi
- Qty
- 542000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 600V N-Channel SupreMOS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 5 V
- Width: 6.22 mm
- Qg - Gate Charge: 17.8 nC
- Vgs - Gate-Source Voltage: 30 V
- Type: N-Channel MOSFET
- Fall Time: 11.5 ns
- Mounting Style: SMD/SMT