Semiconductors
ESDBM3V3AH1 Diodes Incorporated Inventory and RFQ Quote
1A 7.6V 60W 4V 3.3V DFNWB-2L(1.0x0.6) ESD and Surge Protection (TVS/ESD) ROHS ESDBM3V3AH1 Diodes Incorporated DFN1006-2L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- ESDBM3V3AH1
- Brand
- Diodes Incorporated
- Qty
- 595000
- Package
- DFN1006-2L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
1A 7.6V 60W 4V 3.3V DFNWB-2L(1.0x0.6) ESD and Surge Protection (TVS/ESD) ROHS
- Source Category
- TVS/ / > (TVS/ESD)
- Reference Source
- LCSC
Key Specifications
- Peak Pulse Current (Ipp)@10/1000us: 1A
- Reverse Leakage Current (Ir): 50nA
- Maximum Clamping Voltage: 7.6V
- Peak Pulse Power Dissipation (Ppp)@10/1000us: 60W
- Breakdown Voltage: 4V
- Reverse Stand-Off Voltage (Vrwm): 3.3V
- Type: ESD