Semiconductors
DZT5551-13 Diodes Incorporated Inventory and RFQ Quote
Bipolar Transistors - BJT 1000mW 160Vceo DZT5551-13 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DZT5551-13
- Brand
- Diodes Incorporated
- Qty
- 582000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT 1000mW 160Vceo
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: NPN
- Emitter- Base Voltage VEBO: 6 V
- Width: 3.7 mm
- Package / Case: SOT-223-4
- Mounting Style: SMD/SMT
- Product Category: Bipolar Transistors - BJT
- DC Collector/Base Gain hfe Min: 30 at 50 mA, 5 V
- Unit Weight: 0.003951 oz
- Collector- Emitter Voltage VCEO Max: 160 V
- Configuration: Single