Power
DMT10H015LPS-13 Diodes Incorporated Inventory and RFQ Quote
MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W DMT10H015LPS-13 Diodes Incorporated PowerDI5060-8 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMT10H015LPS-13
- Brand
- Diodes Incorporated
- Qty
- 506000
- Package
- PowerDI5060-8
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: PowerDI5060-8
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 4.9 mm
- Qg - Gate Charge: 33.3 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 8.1 nS
- Mounting Style: SMD/SMT
- Product Category: MOSFET