Semiconductors
DMT10H009LH3 Diodes Incorporated Inventory and RFQ Quote
MOSFET MOSFET BVDSS 61V-100V DMT10H009LH3 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMT10H009LH3
- Brand
- Diodes Incorporated
- Qty
- 593000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET MOSFET BVDSS 61V-100V
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: TO-251-3
- Vgs th - Gate-Source Threshold Voltage: 1.3 V
- Qg - Gate Charge: 20.2 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 14.9 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Diodes Incorporated