Power
DMN80H2D0SCTI Diodes Incorporated Inventory and RFQ Quote
MOSFET MOSFETBVDSS: 651V-800V DMN80H2D0SCTI Diodes Incorporated TO-220F Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN80H2D0SCTI
- Brand
- Diodes Incorporated
- Qty
- 532000
- Package
- TO-220F
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET MOSFETBVDSS: 651V-800V
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 800 V
- Transistor Polarity: N-Channel
- Package / Case: ITO-220AB-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Qg - Gate Charge: 35.4 nC
- Vgs - Gate-Source Voltage: 30 V
- Fall Time: 42.6 ns
- Mounting Style: Through Hole
- Product Category: MOSFET
- Brand: Diodes Incorporated