Semiconductors
DMN63D8LW-7 Diodes Incorporated Inventory and RFQ Quote
MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A DMN63D8LW-7 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN63D8LW-7
- Brand
- Diodes Incorporated
- Qty
- 548000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Package / Case: SOT-323-3
- Vgs th - Gate-Source Threshold Voltage: 800 mV
- Qg - Gate Charge: 0.9 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 16.7 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Diodes Incorporated