Semiconductors
DMN63D8LDWQ-7 Diodes Incorporated Inventory and RFQ Quote
MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA DMN63D8LDWQ-7 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN63D8LDWQ-7
- Brand
- Diodes Incorporated
- Qty
- 579000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 2.8 Ohms, 2.8 Ohms
- Package / Case: SOT-363-6
- Vgs th - Gate-Source Threshold Voltage: 800 mV
- Qg - Gate Charge: 870 pC, 870 pC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 6.3 ns, 6.3 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET