Semiconductors
DMN60H4D5SK3-13 Diodes Incorporated Inventory and RFQ Quote
MOSFET MOSFETBVDSS: 501V-650V DMN60H4D5SK3-13 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN60H4D5SK3-13
- Brand
- Diodes Incorporated
- Qty
- 582000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET MOSFETBVDSS: 501V-650V
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Qg - Gate Charge: 8.2 nC
- Vgs - Gate-Source Voltage: 30 V
- Fall Time: 13.2 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Diodes Incorporated