Semiconductors
DMN30H4D1S-13 Diodes Incorporated Inventory and RFQ Quote
MOSFET MOSFET BVDSS: 251V~500V SOT23 T&R 10K DMN30H4D1S-13 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN30H4D1S-13
- Brand
- Diodes Incorporated
- Qty
- 547000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET MOSFET BVDSS: 251V~500V SOT23 T&R 10K
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 300 V
- Transistor Polarity: N-Channel, NPN
- Package / Case: SOT-23-3
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Qg - Gate Charge: 4.8 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 13.8 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Diodes Incorporated