Semiconductors
DMN3035LWN-13 Diodes Incorporated Inventory and RFQ Quote
5.5A 35mΩ@4.8A,10V 2V@250uA 2 N-Channel VDFN3020-8 MOSFETs ROHS DMN3035LWN-13 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN3035LWN-13
- Brand
- Diodes Incorporated
- Qty
- 580000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
5.5A 35mΩ@4.8A,10V 2V@250uA 2 N-Channel VDFN3020-8 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Continuous Drain Current (Id): 5.5A
- Drain Source On Resistance (RDS(on)@Vgs: 35mΩ@4.8A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 2 N
- Input Capacitance (Ciss@Vds): 399pF@15V
- Total Gate Charge (Qg@Vgs): 4.5nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)